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CPH5831

更新时间： 2024-09-10 03:26:31
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
6页 54K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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CPH5831 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.76
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：3 A最大漏极电流 (ID)：3 A
最大漏源导通电阻：0.063 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G5元件数量：1
端子数量：5工作模式：DEPLETION MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.9 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

CPH5831 数据手册

 浏览型号CPH5831的Datasheet PDF文件第2页浏览型号CPH5831的Datasheet PDF文件第3页浏览型号CPH5831的Datasheet PDF文件第4页浏览型号CPH5831的Datasheet PDF文件第5页浏览型号CPH5831的Datasheet PDF文件第6页 
Ordering number : ENN8220  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
CPH5831  
General-Purpose Switching Device  
Applications  
Features  
•
DC / DC converters.  
•
Composite type with a N-Channel Silicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained  
in one package facilitating high-density mounting.  
• [MOS]  
• Low ON-resistance.  
• Ultrahigh-speed switching.  
• 1.8V drive.  
• [SBD]  
• Short reverse recovery time.  
• Low forward voltage.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
20  
±10  
3
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (600mm2✕0.8mm) 1unit  
12  
A
DP  
P
0.9  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : XH  
V
15  
V
V
RRM  
V
15  
2
RSM  
I
O
A
I
50Hz sine wave, 1cycle  
10  
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
GI IM  
12805PE TS IM TB-100797  
No.8220-1/6  
123456

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