生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 5 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
配置: | COMPLEX | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 2.5 A | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 0.125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.9 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH5870 | SANYO |
获取价格 |
N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applica | |
CPH5871 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH5871_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH5871-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH5871-TL-W | ONSEMI |
获取价格 |
单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ | |
CPH5901 | SANYO |
获取价格 |
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications | |
CPH5901_12 | SANYO |
获取价格 |
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications | |
CPH5901F | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,6MA I(DSS),SOT-25 | |
CPH5901F-TL-E | ONSEMI |
获取价格 |
N 沟道 JFET 和 NPN 双极晶体管,15V,6 至 20mA,50V,150mA, | |
CPH5901F-TL-E | SANYO |
获取价格 |
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications |