Datasheet > CPH5905G

CPH5905G

更新时间： 2024-09-14 14:48:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	50K
描述
TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),SOT-25

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CPH5905G 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.59
FET 技术：	JUNCTION	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

CPH5905G 数据手册

Ordering number : ENN7177A

CPH5905

NPN Epitaxial Planar Silicon Transistor

N-Channel Silicon Junction FET

High-Frequency Amplifier. AM Amplifier.

Low-Frequency Amplifier Applications

CPH5905

Features

•

Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency

greatly.

•

The CPH5905 contains a 2SK3557-equivalent chip and a 2SC4639-equivalent chip in one package.

Drain and emitter are shared.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

[FET]

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

--15

DSX

GDS

Drain Current

Allowable Power Dissipation

[TR]

Mounted on a ceramic board (600mm²✕0.8mm)

350

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CBO

CEO

EBO

150

300

Collector Current (Pulse)

Base Current

Collector Dissipation

[Common Ratings]

Total Dissipation

Mounted on a ceramic board (600mm²✕0.8mm)

350

500

150

°C

Junction Temperature

Storage Temperature

Tstg

--55 to +150

°C

Marking : 1E

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No.7177-1/6

62005AC MS IM TB-00001552/ 22802 TS IM TA-3495

12 3 4 5 6

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与CPH5905G相关器件

型号	品牌	获取价格	描述	数据表
CPH5905G-TL-E	SANYO	获取价格	High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH5905G-TL-E	ONSEMI	获取价格	N 沟道 JFET 和 NPN 双极晶体管，15V，10 至 32mA，50V，150mA
CPH5905H	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CPH5,
CPH5905H-TL-E	ONSEMI	获取价格	N 沟道 JFET 和 NPN 双极晶体管，15V，10 至 32mA，50V，150mA
CPH5905H-TL-E	SANYO	获取价格	High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH6001	SANYO	获取价格	High-Frequency Low-Noise Amplifier Applications
CPH6001A	SANYO	获取价格	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
CPH6001A_12	SANYO	获取价格	High-Frequency Low-Noise Amplifier Applications
CPH6001A-TL-E	ONSEMI	获取价格	射频晶体管，12 V，100 mA，fT = 6.7 GHz
CPH6002	SANYO	获取价格	NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications

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