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CPH6006

更新时间： 2024-09-15 19:58:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 26K
描述
TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),TSOP

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中文翻译

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CPH6006 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.61
最大集电极电流 (IC)：0.3 A配置：Single
最小直流电流增益 (hFE)：20最高工作温度：150 °C
极性/信道类型：NPN最大功率耗散 (Abs)：1 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

CPH6006 数据手册

 浏览型号CPH6006的Datasheet PDF文件第2页浏览型号CPH6006的Datasheet PDF文件第3页 
Ordering number : ENN7690  
NPN Epitaxial Planar Silicon Transistor  
CPH6006  
Video Output Driver,  
High-Frequency Amplifier Applications  
Features  
Package Dimensions  
unit : mm  
2146A  
•
High f (f =2.2GHz typ).  
T
T
•
Large current (I =300mA).  
C
• Adoption of FBET process.  
[CPH6006]  
0.15  
2.9  
5
6
1
4
0.05  
2
3
0.95  
1 : Collector  
2 : Collector  
3 : Base  
4 : Emitter  
5 : Collector  
6 : Collector  
0.4  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
SANYO : CPH6  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
30  
20  
V
3
300  
V
I
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
I
600  
CP  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
1.0  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
°C  
°C  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
typ  
max  
0.1  
I
V
V
V
V
V
V
V
=20V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
E
Emitter Cutoff Current  
I
=2V, I =0  
5.0  
EBO  
C
h
h
(1)  
=5V, I =50mA  
100  
20  
200  
FE  
C
DC Current Gain  
(2)  
FE  
=5V, I =300mA  
C
Gain-Bandwidth Product  
f
T
=5V, I =50mA  
C
2.2  
GHz  
pF  
pF  
V
Output Capacitance  
Cob  
Cre  
=10V, f=1MHz  
=10V, f=1MHz  
2.9  
2.6  
Reverse Transfer Capacitance  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
V
(sat)  
I
C
C
=100mA, I =10mA  
0.15  
0.9  
0.5  
1.2  
CE  
(sat)  
B
V
I
=100mA, I =10mA  
V
BE  
B
Marking : GF  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
42004 TS IM TA-100887 No.7690-1/3  
123

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