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CPH6074 PDF预览

CPH6074

更新时间: 2024-09-15 06:48:27
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
3页 249K
描述
For VHF frequency conversion, local oscillation

CPH6074 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.4
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.7 pF
集电极-发射极最大电压:15 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):60最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1200 MHzBase Number Matches:1

CPH6074 数据手册

 浏览型号CPH6074的Datasheet PDF文件第2页浏览型号CPH6074的Datasheet PDF文件第3页 
Ordering number : ENA1474  
SANYO Sem iconductors  
DATA S HEET  
PNP Epitaxial Planar Silicon Transistor  
For VHF frequency conversion,  
local oscillation  
CPH6074  
Features  
High cut-off frequency (f =1.2GHz typ).  
T
Low Cob (Cob=1.2pF typ).  
The two chips contained are equivalent to the 2SA1778.  
Composite type with 2 devices contained in one package, facilitating high-density mounting.  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
-15  
-15  
-3  
CBO  
V
V
CEO  
V
V
EBO  
I
C
-50  
300  
500  
150  
mA  
mW  
mW  
Collector Dissipation  
P
P
When mounted on glass epoxy substrate 1unit  
When mounted on glass epoxy substrate  
C
T
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
C
C
°
°
Tstg  
-55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
-0.1  
-0.1  
120  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
V
= -15V, I =0A  
A
A
μ
CBO  
CB E  
I
V
= -2V, I =0A  
μ
EBO  
EB C  
h
V
CE  
= -10V, I = -5mA  
60  
0.6  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
V
= -10V, I = -5mA  
1.2  
GHz  
pF  
CE C  
Cob  
Cre  
V
CB  
= -10V, f=1MHz  
= -10V, f=1MHz  
1.2  
0.9  
1.7  
Reverse Transfer Capacitance  
V
CB  
pF  
Marking : GQ  
Note) The specications shown above are for each individual transistor.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1474-1/3  
51309AB MS IM TC-00001958  

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