是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.91 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.145 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.6 W |
最大脉冲漏极电流 (IDM): | 12 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH6303 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4A I(D) | TSOP | |
CPH6304 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TSOP | |
CPH6306 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
CPH6311 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
CPH6312 | SANYO |
获取价格 |
High-Speed Switching Applications | |
CPH6313 | SANYO |
获取价格 |
High-Speed Switching Applications | |
CPH6314 | SANYO |
获取价格 |
CPH6314 | |
CPH6314_05 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH6315 | SANYO |
获取价格 |
High-Speed Switching Applications | |
CPH6316 | SANYO |
获取价格 |
High-Speed Switching Applications |