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CPH6302 PDF预览

CPH6302

更新时间: 2024-11-05 22:33:11
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三洋 - SANYO 开关
页数 文件大小 规格书
4页 201K
描述
Ultrahigh-Speed Switching Applications

CPH6302 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.91配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.145 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

CPH6302 数据手册

 浏览型号CPH6302的Datasheet PDF文件第2页浏览型号CPH6302的Datasheet PDF文件第3页浏览型号CPH6302的Datasheet PDF文件第4页 
Ordering number:EN5939  
P-Channel MOS Silicon FET  
CPH6302  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 4V drive.  
2151  
[CPH6302]  
0.15  
2.9  
4
5
6
0 to 0.1  
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
1
2
3
0.95  
0.4  
SANYO : CPH6  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
–30  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
±20  
GSS  
I
–3  
–12  
A
D
Drain Current (pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
Mounted on a ceramic board (900mm2×0.8mm)  
A
DP  
P
D
Tch  
1.6  
W
˚C  
˚C  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=–1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
I
=–30V, V =0  
–10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±16V, V =0  
DS  
±10  
GSS  
V
=–10V, I =–1mA  
D
=–10V, I =–1.5A  
D
=–1.5A, V =–10V  
GS  
–1.0  
2.0  
–2.5  
GS(off)  
| yfs |  
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
3.0  
S
R
1
110  
190  
300  
170  
75  
145  
270  
mΩ  
mΩ  
pF  
pF  
pF  
DS(on)  
D
R
2
I
=–0.5A, V =–4V  
D GS  
DS(on)  
Ciss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : JB  
V
V
V
=–10V, f=1MHz  
DS  
Coss  
Crss  
=–10V, f=1MHz  
DS  
=–10V, f=1MHz  
DS  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
40999TS (KOTO) TA-1602 No.5939-1/4  

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