Datasheet > CPH6319

CPH6319

更新时间： 2024-09-15 23:43:27

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	34K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CPH6319 数据手册

Ordering number : ENN7182

CPH6319

P-Channel Silicon MOSFET

CPH6319

High-Speed Switching Applications

Preliminary

Features

Package Dimensions

unit : mm

•

Low ON-resistance.

• High-speed switching.

• 1.8V drive.

2151A

[CPH6319]

0.15

2.9

0.05

0.95

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

0.4

Specifications

SANYO : CPH6

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

--12

Unit

DSS

Gate-to-Source Voltage

Drain Current (DC)

±8

GSS

-- 5

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

--20

Mounted on a ceramic board (900mm²✕0.8mm)

1.5

°C

Allowable Power Dissipation

Mounted on a FR4 board PW≤5s

2.0

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--12

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0

µA

(BR)DSS

D GS

=--12V, V =0

--10

DSS

=±6.4V, V =0

±10

GSS

V (off)

=--6V, I =--1mA

--0.3

5.8

--1.0

Forward Transfer Admittance

yfs

=--6V, I =--3A

8.5

(on)1

(on)2

(on)3

=--3A, V =--4.5V

mΩ

Static Drain-to-Source On-State Resistance

=--1.5A, V =--2.5V

=--0.3A, V =--1.8V

105

Marking : JV

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3484 No.7182-1/4

12 3 4

中文翻译

下载PDF

与CPH6319相关器件

型号	品牌	获取价格	描述	数据表
CPH6320	SANYO	获取价格	General-Purpose Switching Device Applications
CPH6324	SANYO	获取价格	CPH6324
CPH6328	SANYO	获取价格	Ultrahigh-Speed Switching Applications
CPH6332	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
CPH6337	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH6337_12	SANYO	获取价格	General-Purpose Switching Device Applications
CPH6337-TL-E	SANYO	获取价格	General-Purpose Switching Device Applications
CPH6337-TL-E	ONSEMI	获取价格	Power MOSFET, -12V, 70mΩ, -3.5A, Single P-Channel, CPH6, 3000-REEL
CPH6337-TL-W	ONSEMI	获取价格	Power MOSFET, -12V, 70mΩ, -3.5A, Single P-Channel, 3000-REEL
CPH6339	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device Applications

与CPH6319相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

89
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

CPH6319

CPH6319 数据手册

与CPH6319相关器件

与CPH6319相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CPH6319

CPH6319 数据手册

与CPH6319相关器件

与CPH6319相关文章

您还可以找

您在本页遇到什么问题？