Datasheet > CPH6021-TL-H

CPH6021-TL-H

更新时间： 2024-11-10 11:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		射频晶体管
页数	文件大小	规格书
12页	559K
描述
射频晶体管，NPN 单，12 V，100 mA，fT = 10 GHz

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数据手册

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CPH6021-TL-H 数据手册

Ordering number : ENA1910A

CPH6021

RF Transistor

12V, 100mA, f =10GHz, NPN Single CPH6

http://onsemi.com

Features

•

Low-noise use

: NF=1.2dB typ (f=1GHz)

•

High cut-off frequency : f =10GHz typ (V =5V)

High gain

: S21e ²=14dB typ (f=1GHz)

Halogen free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to- Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

100

EBO

°C

Collector Dissipation

When mounted on ceramic substrate (250mm²0.8mm)

700

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: CPH6

7018A-002

• JEITA, JEDEC

: SC-74, SOT-26, SOT-457

• Minimum Packing Quantity : 3,000 pcs./reel

CPH6021-TL-H

2.9

0.15

0.05

Packing Type: TL

Marking

0.95

1 : Collector

2 : Collector

3 : Base

0.4

Electrical Connection

4 : Emitter

5 : Collector

6 : Collector

1, 2, 5, 6

CPH6

Semiconductor Components Industries, LLC, 2013

August, 2013

62712 TKIM/20911AB TKIM TC-00002543 No. A1910-1/12

12 3 4 5 6 7...12

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