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CPH6001A_12 PDF预览

CPH6001A_12

更新时间: 2024-11-05 12:23:47
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
8页 495K
描述
High-Frequency Low-Noise Amplifier Applications

CPH6001A_12 数据手册

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Ordering number : ENA1079A  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
High-Frequency Low-Noise  
Amplier Applications  
CPH6001A  
Features  
High gain  
: S21e 2=11dB typ (f=1GHz)  
| |  
High cut-off frequency : f =6.7GHz typ  
Small and slim 6-pin package  
Large allowable collector dissipation (800mW max)  
T
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to- Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
20  
12  
CBO  
V
V
CEO  
V
2
V
EBO  
I
C
100  
800  
150  
mA  
mW  
°C  
Collector Dissipation  
P
When mounted on ceramic substrate (250mm2 0.8mm)  
×
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
°C  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CPH6  
7018A-002  
• JEITA, JEDEC  
: SC-74, SOT-26, SOT-457  
• Minimum Packing Quantity : 3,000 pcs./reel  
CPH6001A-TL-E  
2.9  
0.15  
0.05  
Packing Type: TL  
Marking  
6
5
4
3
TL  
1
2
0.95  
1 : Collector  
2 : Collector  
3 : Base  
0.4  
Electrical Connection  
4 : Emitter  
5 : Collector  
6 : Collector  
1, 2, 5, 6  
3
SANYO : CPH6  
4
http://semicon.sanyo.com/en/network  
71112 TKIM/O2109AB TKIM TC-00002102  
No. A1079-1/8  

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NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er