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CPH6002 PDF预览

CPH6002

更新时间： 2024-09-15 03:26:31
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管功率放大器光电二极管
页数 文件大小 规格书
3页 28K
描述
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications

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CPH6002 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N最大集电极电流 (IC)：0.2 A
集电极-发射极最大电压：30 V配置：SINGLE
最小直流电流增益 (hFE)：100最高频带：HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G6元件数量：1
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.8 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：3000 MHzBase Number Matches：1

CPH6002 数据手册

 浏览型号CPH6002的Datasheet PDF文件第2页浏览型号CPH6002的Datasheet PDF文件第3页 
Ordering number : ENA0262  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
High-Frequency Medium-Power  
Amplifier Applications  
CPH6002  
Features  
•
High f (f =3.0GHz typ).  
T
T
•
•
Large current (I =200mA).  
C
Large collector dissipation (800mW max).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
2
V
I
200  
800  
150  
mA  
mW  
°C  
°C  
C
Collector Dissipation  
P
Mounted on a ceramic board (900mm2✕0.8mm)  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
V
CB  
=20V, I =0A  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0A  
5.0  
EBO  
C
h
FE  
=5V, I =50mA  
100  
200  
C
Gain-Bandwidth Product  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : GB  
f
T
=5V, I =50mA  
C
3.0  
GHz  
pF  
Cob  
Cre  
=5V, f=1MHz  
=5V, f=1MHz  
2.7  
1.9  
pF  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
70306 / 42806AB MS IM TB-00002247 No. A0262-1/3  
123

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