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CPH6001

更新时间： 2024-11-04 22:40:15
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
6页 49K
描述
High-Frequency Low-Noise Amplifier Applications

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CPH6001 数据手册

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Ordering number:ENN6132A  
NPN Epitaxial Planar Silicon Transistor  
CPH6001  
High-Frequency Low-Noise  
Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· High gain : S21e 2=11dB typ (f=1GHz).  
· High cutoff frequency : f =6.7GHz typ.  
· Small and slim 6-pin package.  
· Large allowable collector dissipation (800mW max).  
T
2146A  
[CPH6001]  
0.15  
2.9  
5
6
1
4
0.05  
2
3
1 : Collector  
0.95  
2 : Collector  
3 : Base  
4 : Emitter  
5 : Collector  
6 : Collector  
SANYO : CPH6  
0.4  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
20  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
12  
V
CEO  
V
2
100  
V
EBO  
I
mA  
mW  
˚C  
˚C  
C
Mounted on a ceramic board (250mm2× 0.8mm)  
800  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
V
V
V
V
=10V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
h
1
=5V, I =30mA  
C
=5V, I =70mA  
C
=5V, I =30mA  
C
=5V, f=1MHz  
90  
70  
5
180  
FE  
FE  
2
f
Gain-Bandwidth Product  
Output Capacitance  
6.7  
GHz  
pF  
T
Cob  
0.95  
0.6  
11  
1.5  
2.0  
Reverse Transfer Capacitance  
Cre  
=5V, f=1MHz  
pF  
| S21e |2  
NF  
9
dB  
=5V, I =30mA, f=1GHz  
C
Forward Transfer Gain  
Noise Figure  
V
=5V, I =7mA, f=1GHz  
C
1.1  
dB  
CB  
Marking : GA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60100TS (KOTO) TA-2924 No.6132–1/6  
123456

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