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CPH5901F

更新时间： 2024-09-15 07:24:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 43K
描述
TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,6MA I(DSS),SOT-25

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CPH5901F 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.6FET 技术：JUNCTION
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.35 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

CPH5901F 数据手册

 浏览型号CPH5901F的Datasheet PDF文件第2页浏览型号CPH5901F的Datasheet PDF文件第3页浏览型号CPH5901F的Datasheet PDF文件第4页浏览型号CPH5901F的Datasheet PDF文件第5页浏览型号CPH5901F的Datasheet PDF文件第6页 
Ordering number : ENN8278A  
TR : NPN Epitaxial Planar Silicon Transistor  
FET : N-Channel Silicon Junction FET  
High-Frequency Amplifier. AM Amplifier.  
Low-Frequency Amplifier Applications  
CPH5901  
Features  
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting  
efficiency greatly.  
•
•
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one  
package.  
Common drain and emitter.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[FET]  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
V
15  
--15  
10  
V
V
DSX  
V
GDS  
I
G
mA  
mA  
mW  
Drain Current  
I
50  
D
Allowable Power Dissipation  
[TR]  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
350  
D
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
55  
50  
V
V
CBO  
CEO  
EBO  
6
V
I
150  
300  
30  
mA  
mA  
mA  
mW  
C
Collector Current (Pulse)  
Base Current  
I
CP  
I
B
Collector Dissipation  
[Common Ratings]  
Total Dissipation  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
Mounted on a ceramic board (600mm2✕0.8mm)  
350  
C
P
500  
150  
mW  
°C  
T
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
°C  
Marking : 1A  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
No.8278-1/6  
62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705  
123456

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 		N 沟道 JFET 和 NPN 双极晶体管，15V，10 至 32mA，50V，150mA

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