5秒后页面跳转
CPH5902H PDF预览

CPH5902H

更新时间: 2024-09-14 14:41:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 50K
描述
TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,16MA I(DSS),SOT-25

CPH5902H 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.6
Is Samacsys:NFET 技术:JUNCTION
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CPH5902H 数据手册

 浏览型号CPH5902H的Datasheet PDF文件第2页浏览型号CPH5902H的Datasheet PDF文件第3页浏览型号CPH5902H的Datasheet PDF文件第4页浏览型号CPH5902H的Datasheet PDF文件第5页浏览型号CPH5902H的Datasheet PDF文件第6页 
Ordering number : ENN6962B  
NPN Epitaxial Planar Silicon Transistor  
N-Channel Silicon Junction FET  
CPH5902  
High-Frequency Amplifier, AM Amplifier,  
Low-Frequency Amplifier Applications  
Features  
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting  
efficiency greatly.  
The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package.  
Drain and emitter are shared.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[FET]  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
V
15  
--15  
10  
V
V
DSX  
V
GDS  
I
G
mA  
mA  
mW  
Drain Current  
I
50  
D
Allowable Power Dissipation  
[TR]  
P
Mounted on a ceramic board (600mm20.8mm)  
350  
D
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
55  
50  
V
V
CBO  
CEO  
EBO  
6
V
I
150  
300  
30  
mA  
mA  
mA  
mW  
C
Collector Current (Pulse)  
Base Current  
I
CP  
I
B
Collector Dissipation  
[Common Ratings]  
Total Dissipation  
P
Mounted on a ceramic board (600mm20.8mm)  
Mounted on a ceramic board (600mm20.8mm)  
350  
C
P
500  
150  
mW  
°C  
T
Junction Temperature  
Storage Temperature  
Marking : RB  
Tj  
Tstg  
--55 to +150  
°C  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
GI IM  
62005AC MS IM TB-00001588 / 22004 TS IM TA-101143 / 52501 TS IM TA-3247 No.6962-1/6  

与CPH5902H相关器件

型号 品牌 获取价格 描述 数据表
CPH5902H-TL-E SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH5902H-TL-E ONSEMI

获取价格

N 沟道 JFET 和 NPN 双极晶体管,15V,10 至 32mA,50V,150mA
CPH5905 SANYO

获取价格

High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
CPH5905_05 SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
CPH5905_12 SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH5905G ONSEMI

获取价格

TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),SOT-25
CPH5905G-TL-E SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH5905G-TL-E ONSEMI

获取价格

N 沟道 JFET 和 NPN 双极晶体管,15V,10 至 32mA,50V,150mA
CPH5905H ONSEMI

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CPH5,
CPH5905H-TL-E ONSEMI

获取价格

N 沟道 JFET 和 NPN 双极晶体管,15V,10 至 32mA,50V,150mA