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CPH5901F-TL-E PDF预览

CPH5901F-TL-E

更新时间: 2024-09-14 12:43:23
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管光电二极管
页数 文件大小 规格书
8页 534K
描述
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications

CPH5901F-TL-E 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28配置:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR
最大漏极电流 (ID):0.05 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G5元件数量:1
端子数量:5工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

CPH5901F-TL-E 数据手册

 浏览型号CPH5901F-TL-E的Datasheet PDF文件第2页浏览型号CPH5901F-TL-E的Datasheet PDF文件第3页浏览型号CPH5901F-TL-E的Datasheet PDF文件第4页浏览型号CPH5901F-TL-E的Datasheet PDF文件第5页浏览型号CPH5901F-TL-E的Datasheet PDF文件第6页浏览型号CPH5901F-TL-E的Datasheet PDF文件第7页 
Ordering number : EN8278B  
SANYO Sem iconductors  
DATA S HEET  
TR : NPN Epitaxial Planar Silicon Transistor  
FET : N-Channel Silicon Junction FET  
CPH5901  
High-Frequency Amplier. AM Amplier.  
Low-Frequency Amplier Applications  
Features  
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting  
efciency greatly  
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package  
Common drain and emitter  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[FET]  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
V
15  
--15  
10  
V
V
DSX  
V
GDS  
I
G
mA  
mA  
mW  
Drain Current  
I
D
50  
Allowable Power Dissipation  
[TR]  
P
Mounted on a ceramic board (600mm2 0.8mm)  
350  
×
D
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
55  
50  
V
V
CBO  
V
CEO  
V
EBO  
6
V
I
C
150  
300  
30  
mA  
mA  
mA  
mW  
Collector Current (Pulse)  
Base Current  
I
CP  
I
B
Collector Dissipation  
[TR]  
P
Mounted on a ceramic board (600mm2 0.8mm)  
350  
×
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
P
Mounted on a ceramic board (600mm2 0.8mm)  
500  
150  
mW  
×
T
Tj  
C
C
°
°
Tstg  
--55 to +150  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: CPH5  
7017A-007  
• JEITA, JEDEC  
: SC-74A, SOT-25  
• Minimum Packing Quantity : 3,000 pcs./reel  
CPH5901F-TL-E  
CPH5901G-TL-E  
0.15  
2.9  
Packing Type : TL  
Marking  
5
4
3
2
0.05  
TL  
1
1 : Collector  
2 : Gate  
0.95  
0.4  
Electrical Connection  
3 : Source  
4 : Emitter/Drain  
5 : Base  
5
4
3
SANYO : CPH5  
1
2
http://semicon.sanyo.com/en/network  
60612 TKIM/62005AC MSIM TB-00001557/32505AC TSIM TA-3705  
No.8278-1/8  

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