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CPH5870

更新时间： 2024-09-14 09:30:23
品牌 Logo 应用领域
三洋 - SANYO 晶体肖特基二极管开关晶体管光电二极管通用开关
页数 文件大小 规格书
5页 67K
描述
N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

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CPH5870 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：1.8 A最大漏极电流 (ID)：1.8 A
最大漏源导通电阻：0.22 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G5元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.9 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

CPH5870 数据手册

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Ordering number : ENA1161  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
CPH5870  
General-Purpose Switching Device  
Applications  
Features  
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package  
facilitating high-density mounting.  
[MOSFET]  
•
• Low ON-resistance  
• Ultrahigh-speed switching  
•
2.5V drive.  
•
[SBD]  
•
Short reverse recovery time (t max=10ns).  
rr  
•
Low forward voltage (V max=0.55V).  
F
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
60  
±10  
1.8  
7.2  
V
V
DSS  
GSS  
I
D
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
Marking : YY  
I
PW≤10μs, duty cycle≤1%  
When mounted on ceramic substrate (600mm2✕0.8mm) 1unit  
A
DP  
P
0.9  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +125  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51408PE TI IM TC-00001359 No. A1161-1/5  
12345

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