5秒后页面跳转
CPH5871 PDF预览

CPH5871

更新时间: 2024-09-14 09:30:23
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
5页 363K
描述
General-Purpose Switching Device Applications

CPH5871 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.33
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):3.5 A
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.132 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G5
元件数量:1端子数量:5
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

CPH5871 数据手册

 浏览型号CPH5871的Datasheet PDF文件第2页浏览型号CPH5871的Datasheet PDF文件第3页浏览型号CPH5871的Datasheet PDF文件第4页浏览型号CPH5871的Datasheet PDF文件第5页 
Ordering number : ENA1401  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
CPH5871  
General-Purpose Switching Device  
Applications  
Features  
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package  
facilitating high-density mounting.  
[MOSFET]  
Ultrahigh-speed switching  
1.8V drive  
[SBD]  
Short reverse recovery time.  
Low forward voltage.  
Halogen free compliance.  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
[MOSFET]  
Symbol  
Conditions  
Ratings  
Unit  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
30  
±12  
3.5  
14  
V
V
DSS  
V
GSS  
I
D
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
DP  
PW 10 s, duty cycle 1%  
When mounted on ceramic substrate (600mm2 0.8mm) 1unit  
A
μ
P
0.9  
150  
W
°C  
×
D
Tch  
Tstg  
--55 to +125  
C
°
Marking : YZ  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1401-1/5  
12809PE MS IM TC-00001794  

与CPH5871相关器件

型号 品牌 获取价格 描述 数据表
CPH5871_12 SANYO

获取价格

General-Purpose Switching Device Applications
CPH5871-TL-H SANYO

获取价格

General-Purpose Switching Device Applications
CPH5871-TL-W ONSEMI

获取价格

单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ
CPH5901 SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
CPH5901_12 SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
CPH5901F ONSEMI

获取价格

TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,6MA I(DSS),SOT-25
CPH5901F-TL-E ONSEMI

获取价格

N 沟道 JFET 和 NPN 双极晶体管,15V,6 至 20mA,50V,150mA,
CPH5901F-TL-E SANYO

获取价格

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
CPH5901G ONSEMI

获取价格

TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,10MA I(DSS),SOT-25
CPH5901-G ONSEMI

获取价格

Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction