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CPH5901

更新时间： 2024-09-14 09:30:23
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
6页 101K
描述
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications

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CPH5901 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.29配置：SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR
最大漏极电流 (ID)：0.05 AFET 技术：JUNCTION
JESD-30 代码：R-PDSO-G5元件数量：1
端子数量：5工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

CPH5901 数据手册

 浏览型号CPH5901的Datasheet PDF文件第2页浏览型号CPH5901的Datasheet PDF文件第3页浏览型号CPH5901的Datasheet PDF文件第4页浏览型号CPH5901的Datasheet PDF文件第5页浏览型号CPH5901的Datasheet PDF文件第6页 
Ordering number : ENN8278A  
TR : NPN Epitaxial Planar Silicon Transistor  
FET : N-Channel Silicon Junction FET  
CPH5901  
High-Frequency Amplifier. AM Amplifier.  
Low-Frequency Amplifier Applications  
Features  
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting  
efficiency greatly.  
•
•
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one  
package.  
Common drain and emitter.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[FET]  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
V
15  
--15  
10  
V
V
DSX  
V
GDS  
I
mA  
mA  
mW  
G
Drain Current  
I
D
50  
Allowable Power Dissipation  
[TR]  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
350  
D
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
55  
50  
V
V
CBO  
CEO  
EBO  
6
V
I
C
150  
300  
30  
mA  
mA  
mA  
mW  
Collector Current (Pulse)  
Base Current  
I
CP  
I
B
Collector Dissipation  
[Common Ratings]  
Total Dissipation  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
Mounted on a ceramic board (600mm2✕0.8mm)  
350  
C
P
T
500  
150  
mW  
°C  
Junction Temperature  
Storage Temperature  
Marking : 1A  
Tj  
Tstg  
--55 to +150  
°C  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
No.8278-1/6  
62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705  
123456

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