Datasheet > CPH5871_12

CPH5871_12

更新时间： 2024-09-14 12:55:15

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	531K
描述
General-Purpose Switching Device Applications

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中文翻译

获取价格

数据手册

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CPH5871_12 数据手册

CPH5871

Ordering number : ENA1401A

SANYO Sem iconductors

DATA S HEET

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

CPH5871

General-Purpose Switching Device

Applications

Features

•

Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting

•

Halogen free compliance

Protection diode in

1.8V drive

Low forward voltage

•

[MOSFET] Ultrahigh-speed switching

•

[SBD]

Short reverse recovery time

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

±12

3.5

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (600mm²0.8mm) 1unit

≤

0.9

150

°C

Tch

Tstg

--55 to +125

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

RRM

RSM

50Hz sine wave, 1 cycle

FSM

--55 to +125

°C

Tstg

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: CPH5

7017A-005

• JEITA, JEDEC

: SC-74A, SOT-25

• Minimum Packing Quantity : 3,000 pcs./reel

CPH5871-TL-H

0.15

2.9

Packing Type : TL

Marking

0.05

1 : Cathode

2 : Drain

0.95

0.4

Electrical Connection

3 : Gate

4 : Source

5 : Anode

SANYO : CPH5

http://semicon.sanyo.com/en/network

61312 TKIM/12809PE MSIM TC-00001794

No. A1401-1/7

12 3 4 5 6 7

中文翻译

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