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CPH5848

更新时间： 2024-09-10 21:19:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 56K
描述
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-25

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中文翻译

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CPH5848 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.06
配置：Single最大漏极电流 (Abs) (ID)：2 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：125 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.9 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

CPH5848 数据手册

 浏览型号CPH5848的Datasheet PDF文件第2页浏览型号CPH5848的Datasheet PDF文件第3页浏览型号CPH5848的Datasheet PDF文件第4页浏览型号CPH5848的Datasheet PDF文件第5页浏览型号CPH5848的Datasheet PDF文件第6页 
Ordering number : EN8690  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : P-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
General-Purpose Switching Device  
Applications  
CPH5848  
Applications  
•
DC / DC converters.  
Features  
•
Composite type with a P-Channel Sillicon MOSFET (MCH3306) and a Schottky Barrier Diode (SS10015M)  
contained in one package facilitating high-density mounting.  
[MOSFET]  
•
Low ON-resistance.  
•
1.8V driver.  
[SBD]  
•
Short reverse recovery time.  
•
Low forward voltage.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
--20  
±10  
-- 2  
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (600mm2✕0.8mm) 1unit  
--8  
A
DP  
P
0.9  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : YA  
V
15  
V
V
RRM  
V
15  
1
RSM  
I
O
A
I
50Hz sine wave, 1 cycle  
10  
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
72006PE MS IM TC-00000031 No.8690-1/6  
123456

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