生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 5 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.063 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.9 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH5831 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH5835 | SANYO |
获取价格 |
CPH5835 | |
CPH5835_07 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5838 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH5839 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH5846 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5847 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5848 | ONSEMI |
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TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-25 | |
CPH5852 | SANYO |
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MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode | |
CPH5854 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |