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CPH5805 PDF预览

CPH5805

更新时间: 2024-09-09 22:33:07
品牌 Logo 应用领域
三洋 - SANYO 转换器
页数 文件大小 规格书
5页 53K
描述
DC / DC Converter Applications

CPH5805 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.38
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:0.084 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

CPH5805 数据手册

 浏览型号CPH5805的Datasheet PDF文件第2页浏览型号CPH5805的Datasheet PDF文件第3页浏览型号CPH5805的Datasheet PDF文件第4页浏览型号CPH5805的Datasheet PDF文件第5页 
Ordering number : ENN6981  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
CPH5805  
DC / DC Converter Applications  
Features  
Package Dimensions  
Composite type with an N-Channel Sillicon MOSFET unit : mm  
(MCH3412) and a Schottky Barrier Diode (SBS006)  
2171  
contained in one package facilitating high-density  
mounting.  
[MOSFET]  
Low ON-resistance.  
Ultrahigh-speed switching.  
4V drive.  
[SBD]  
[CPH5805]  
2.9  
4
0.15  
5
3
2
0.05  
1
Short reverse recovery time  
.
0.95  
0.4  
1 : Cathode  
2 : Drain  
3 : Gate  
4 : Source  
5 : Anode  
Low forward voltage  
.
SANYO : CPH5  
0.4  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
30  
V
V
DSS  
±20  
GSS  
I
3
12  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW10µs, duty cycle1%  
A
DP  
P
Mounted on a ceramic board (600mm20.8mm) 1unit  
0.9  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : QF  
V
30  
30  
V
V
RRM  
V
RSM  
I
0.5  
A
O
I
50Hz sine wave, 1 cycle  
10  
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62001 TS IM TA-3173 No.6981-1/5  

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TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SOT-25