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CMMT491 PDF预览

CMMT491

更新时间: 2024-11-29 03:26:03
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
3页 113K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CMMT491 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.55
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMMT491 数据手册

 浏览型号CMMT491的Datasheet PDF文件第2页浏览型号CMMT491的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN SILICON PLANAR EPITAXIAL TRANSISTOR  
CMMT491  
PIN CONFIGURATION (NPN)  
1 = BASE  
SOT-23  
2 = EMITTER  
Formed SMD Package  
3 = COLLECTOR  
3
1
2
Marking Code is =491  
Medium Power Transistor  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
DESCRIPTION  
SYMBOL  
VCBO  
UNITS  
80  
60  
5
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
VCEO  
VEBO  
IC  
V
1
Collector Current Continuous  
Collector Current Peak  
Power Dissipation @ Ta=25ºC  
A
ICM  
PD  
2
A
500  
mW  
Operating and Storage Junction  
Temperature Range  
Tj, Tstg  
- 55 to +150  
ºC  
Electrical Characterstics (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VCBO  
CONDITIONS  
MIN  
80  
60  
5
TYP  
MAX  
UNIT  
V
IC=100mA, IE=0  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Cut off Current  
Collector Cut off Current  
Emitter Cut off Current  
*VCEO(sus)  
IC=10mA, IB=0  
V
VEBO  
ICBO  
ICES  
IEBO  
IE=100mA, IC=0  
VCB=60V, IE=0  
VCE=60V, VBE=0  
V
100  
100  
100  
0.25  
0.50  
nA  
nA  
VEB=4V, IC=0  
IC=500mA, IB=50mA  
IC=1A, IB=100mA  
nA  
V
Collector Emitter Saturation  
Voltage  
*VCE(sat)  
*VBE(sat)  
V
IC=1A, IB=100mA  
Base Emitter Saturation Voltage  
1.10  
1.00  
V
V
*VBE(on)  
*hFE  
VCE =5V, IC=1A  
Base Emitter On Voltage  
DC Current Gain  
VCE =5V, IC=1mA  
100  
100  
80  
V
CE =5V, IC=500mA  
300  
VCE =5V, IC=1A  
VCE =5V, IC=2A  
30  
fT  
VCE=10V, IC=50mA, f=100MHz  
VCB=10V, f=1MHz  
Transition Frequency  
Output Capacitance  
150  
MHz  
pF  
Cobo  
10  
*Pulse Test: Pulse Width =300 ms, Duty Cycle <2%  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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