5秒后页面跳转
CMN138KCDW PDF预览

CMN138KCDW

更新时间: 2024-11-29 17:15:47
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1150K
描述
SOT-363

CMN138KCDW 数据手册

 浏览型号CMN138KCDW的Datasheet PDF文件第2页浏览型号CMN138KCDW的Datasheet PDF文件第3页浏览型号CMN138KCDW的Datasheet PDF文件第4页浏览型号CMN138KCDW的Datasheet PDF文件第5页 
CMN138KCDW  
N-Channel 60V (D-S) Power MOSFET  
Description  
Applications  
CMN138KCDW is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
D1 G2 S2  
VDS: 60V  
Device Code = 6N  
Date Code = XX  
ID: 0.25A  
RDSON (@VGS=10V) : < 3Ω  
RDSON (@VGS=4.5V) : < 3.4Ω  
RDSON (@VGS=2.5V) : < 4.5Ω  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
6NXX  
Pin 1  
S1 G1 D2  
Ordering Information  
Equivalent Circuit and Pin Configuration  
SOT-363 (Top View)  
Part Number  
Packaging  
Reel Size  
CMN138KCDW 3000/Tape & Reel  
7 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Maximum  
60  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VGS  
±20  
V
0.25  
A
TA=25°C ,Steady State  
Continuous Drain Current  
Pulsed Drain Current(1)  
Total Power Dissipation @ TA=25°C (2)  
ID  
TA=100°C ,Steady State  
0.16  
1
A
A
IDM  
PD  
Steady State  
300  
mW  
°C/W  
°C  
Thermal Resistance Junction-to-Ambient (2)  
Steady State  
RθJA  
416  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Revision_1.0  
1 of 5  
www.appliedpowermicro.com