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CMN1005GF5 PDF预览

CMN1005GF5

更新时间: 2024-11-29 17:15:35
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CMN1005GF5 数据手册

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CMN1005GF5  
N-Channel 100V (D-S) Power MOSFET  
Description  
Applications  
The CMN1005GF5 is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: 100V  
Marking Code = N1005GF5  
Date Code = XXXX  
ID: 99A  
N1005GF5  
XXXX  
RDSON (@VGS=10V) : < 5.8mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Equivalent Circuit and Pin Configuration  
Ordering Information  
Top View  
Bottom View  
Part Number  
Packaging  
5000/Tape & Reel  
Reel Size  
CMN1005GF5  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
100  
VGS  
V
±20  
TC=25°C  
TC=100°C  
TA=25°C  
TA=100°C  
99  
64  
A
ID  
A
Drain Current(1)(6)  
23  
A
ID  
15  
A
Pulsed Drain Current(3)  
Avalanche Current(3)  
Avalanche energy(3) L=1mH, VDD=80V, VGS=10V, IAS=28.3A , RG=25Ω  
IDM  
IAS  
396  
28.3  
400  
114  
6
A
A
EAS  
mJ  
W
TC=25°C  
Total Power Dissipation(4)  
TA=25°C  
PD  
W
Thermal Resistance Junction-to-Ambient(2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
RθJA  
RθJc  
20  
°C/W  
°C/W  
°C  
1.1  
TJ,TSTG  
-55 to +150  
Aug. 2023, Rev. 1.2  
1 of 5  
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