Datasheet > CMN2018DF2

CMN2018DF2

更新时间： 2024-09-16 17:15:19

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1307K
描述
DFN2020-6

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CMN2018DF2 数据手册

CMN2018DF2

N-Channel 20V (D-S) Power MOSFET

Description

Applications

CMN2018DF2 is the N-Channel enhancement mode pow-

er field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 20V

Device Code = N2018DF2

Date Code=XXXX

ID: 8A

N2018DF2

XXXX

RDS_ON(@VGS=4.5V) : < 20mΩ

RDS_ON(@VGS=2.5V) : < 24mΩ

RDS_ON(@VGS=1.8V) : < 37mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

DFN2020-6

Part Number

Packaging

Reel Size

CMN2018DF2 3000/Tape & Reel

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

TA=25°C

TA=70°C

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

6.4

IDM

3.1

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

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