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CMN2006U PDF预览

CMN2006U

更新时间: 2024-11-19 17:15:23
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应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1215K
描述
TO-252

CMN2006U 数据手册

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CMN2006U  
N-Channel 20V (D-S) Power MOSFET  
Description  
Applications  
The CMN2006U is the N-Channel enhancement mode  
power field effect transistors with high cell density, high  
voltage planar technology. This high density process and  
design have been optimized switching performance and  
especially tailored to minimize on-state resistance, .  
AC/DC load switch  
SMPS  
LED power  
Marking Information  
Features  
Marking Code = CMN2006U  
Date Code = XXXX  
VDS: 20V  
ID : 57A  
N2006U  
XXXX  
RDSON (@VGS=4.5V) : < 6.0mΩ  
RDSON (@VGS=2.5V) : < 8.8mΩ  
RDSON (@VGS=1.8V) : < 14.0mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
TO-252  
Part Number  
Packaging  
2500/Tape & Reel  
Remark  
D
CMN2006U  
ROHS  
G
S
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Parameter  
Drain-source Voltage  
Symbol  
Maximum  
Unit  
VDS  
VGS  
20  
V
V
Gate-source Voltage  
±10  
Tc=25°C  
Tc=70°C  
57  
A
Continuous Drain Current  
Pulsed Drain Current (1)  
Total Power Dissipation (2)  
ID  
36  
228  
A
IDM  
PD @ Tc=25°C  
PD @ Tc=100°C  
RθJC  
A
29  
W
12  
W
Thermal Resistance Junction-to-Case (2)  
4.3  
°C/W  
°C  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Jul. 2021, Rev. 1.0  
1 of 5  
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