Datasheet > CMN10080GRD

CMN10080GRD

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1272K
描述
TO-251

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数据手册

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CMN10080GRD 数据手册

CMN10080GRU&D

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CMN10080GRU&D is the N-Channel enhancement

mode power field effect transistors with high cell density,

trench technology. This high density process and design

have been optimized switching performance and especial-

ly tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features



V_DS: 100V

X=Package type

I_D: 16A

XXXX = Marking Code

N10080GRX

RDS_ON(@V_GS=10V) : < 85mΩ

RDS_ON(@V_GS=4.5V) : < 105mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

CMN10080GRU

CMN10080GRD

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CMN10080GRU CMN10080GRD

VDS

VGS

100

Gate-source Voltage

±20

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.28

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

3.6

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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