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CMN2004F3 PDF预览

CMN2004F3

更新时间: 2024-09-16 17:15:43
品牌 Logo 应用领域
应能微 - APPLIED POWER 光电二极管
页数 文件大小 规格书
5页 1299K
描述
PDFN3.3x3.3

CMN2004F3 数据手册

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CMN2004F3  
N-Channel 20V (D-S) Power MOSFET  
Description  
Applications  
The CMN2004F3 is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: 20V  
ID: 50A  
Marking Code = N2004F3  
Date Code = XXXX  
RDSON (@VGS=4.5V) : < 3.5mΩ  
RDSON (@VGS=2.5V) : < 5.5mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
N2004F3  
XXXX  
Equivalent Circuit and Pin Configuration  
Ordering Information  
Top View  
Bottom View  
Part Number  
Packaging  
5000/Tape & Reel  
Reel Size  
CMN2004F3  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
20  
±12  
50  
V
TC=25°C  
A
ID  
TC=100°C  
TA=25°C  
TA=100°C  
32  
A
Drain Current(1)(6)  
16  
11  
99  
19  
2.1  
A
A
ID  
Pulsed Drain Current(3)  
IDM  
PD  
A
TC=25°C  
TA=25°C  
W
W
Total Power Dissipation(4)  
Thermal Resistance Junction-to-Ambient(2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
RθJA  
RθJc  
60  
6.5  
°C/W  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Apr. 2023, Rev. 1.0  
1 of 5  
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