Datasheet > CMN2004F3

CMN2004F3

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
应能微 - APPLIED POWER		光电二极管
页数	文件大小	规格书
5页	1299K
描述
PDFN3.3x3.3

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CMN2004F3 数据手册

CMN2004F3

N-Channel 20V (D-S) Power MOSFET

Description

Applications

The CMN2004F3 is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Battery management

Power management

Load switch

Marking Information

Features



VDS: 20V

ID: 50A

Marking Code = N2004F3

Date Code = XXXX

RDS_ON(@VGS=4.5V) : < 3.5mΩ

RDS_ON(@VGS=2.5V) : < 5.5mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

N2004F3

XXXX

Equivalent Circuit and Pin Configuration

Ordering Information

Top View

Bottom View

Part Number

Packaging

5000/Tape & Reel

Reel Size

CMN2004F3

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±12

TC=25°C

TC=100°C

TA=25°C

TA=100°C

Drain Current⁽¹⁾⁽⁶⁾

2.1

Pulsed Drain Current⁽³⁾

IDM

TC=25°C

TA=25°C

Total Power Dissipation⁽⁴⁾

Thermal Resistance Junction-to-Ambient⁽²⁾⁽⁵⁾

Thermal Resistance Junction-to-Case

Junction and Storage Temperature Range

RθJA

RθJc

6.5

°C/W

°C

TJ,TSTG

-55 to +150

Apr. 2023, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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