5秒后页面跳转
CMN3002GPF3 PDF预览

CMN3002GPF3

更新时间: 2024-11-19 17:15:47
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1365K
描述
DFN3.3x3.3

CMN3002GPF3 数据手册

 浏览型号CMN3002GPF3的Datasheet PDF文件第2页浏览型号CMN3002GPF3的Datasheet PDF文件第3页浏览型号CMN3002GPF3的Datasheet PDF文件第4页浏览型号CMN3002GPF3的Datasheet PDF文件第5页 
CMN3002GPF3  
N-Channel 30V (D-S) Power MOSFET  
Description  
Applications  
The CMN3002GPF3 is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: 30V  
ID: 107A  
Marking Code = N3002GPF3  
Date Code = XXXX  
RDSON (@VGS=10V) : < 2.9mΩ  
RDSON (@VGS=4.5V) : < 3.9mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
N3002GPF3  
XXXX  
Equivalent Circuit and Pin Configuration  
Ordering Information  
Top View  
Bottom View  
Part Number  
Packaging  
Reel Size  
CMN3002GPF3 5000/Tape & Reel  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
30  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
V
TC=25°C  
107  
A
ID  
TC=100°C  
TA=25°C  
TA=100°C  
63  
A
Drain Current(1)(6)  
27  
16  
A
A
ID  
Pulsed Drain Current(3)  
IDM  
PD  
214  
50  
A
TC=25°C  
TA=25°C  
W
Total Power Dissipation(4)  
3.1  
40  
W
Thermal Resistance Junction-to-Ambient(2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
RθJA  
RθJC  
°C/W  
2.5  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Revision_1.0  
1 of 5  
www.appliedpowermicro.com