Datasheet > CMMT491A

CMMT491A

更新时间： 2024-11-27 23:42:51

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描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 1A I(C) \| SOT-23

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数据手册

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CMMT491A 数据手册

IS/ISO 9002

IS / IECQC 700000

Lic# QSC/L- 000019.2 IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CMMT491A

SOT-23

PIN CONFIGURATION (NPN)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING: 49A

Complementary CMMT591A

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Peak Pulse Current

SYMBOL

VALUE

UNIT

VCBO

VCEO

VEBO

5.0

1.0

2.0

ICM

Collector Power Dissipation Ta=25 deg C

Operating & Storage Temperature Range

Ptot

Tj, Tstg

500

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C )

DESCRIPTION

SYMBOL

VCBO

VCEO (sus)* IC=10mA, IB=0

VEBO

ICBO

ICES

TEST CONDITION

IC=100uA, IE=0

MIN

5.0

TYP

MAX

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

IE=100uA, IC=0

VCB=30V, IE=0

VCE=30V, VBE=0

VEB=4V, IC=0

IC=500mA,IB=50mA

IC=1A, IB=100mA

IC=1A, VCE=5V

IC=1mA,VCE=5V

IC=500mA,VCE=5V

IC=1A, VCE=5V

IC=2A, VCE=5V

100

Emitter Cut off Current

Collector Emitter Saturation Voltage

IEBO

VCE(Sat)*

100

0.30

0.50

1.1

1.0

900

Base Emitter Saturation Voltage

Base Emitter on Voltage

DC Current Gain

VBE(Sat)*

VBE(on)*

hFE*

300

200

Dynamic Characteristics

Transition Frequency

VCE=10V,IC=50mA,

f=100MHz

150

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

f=1MHz

*Pulsed Conditions pulse width=300us, Duty Cycle=2%

Continental Device India Limited

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Data Sheet

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