Datasheet > CMN1001R6GLLA

CMN1001R6GLLA

更新时间： 2024-11-29 17:15:15

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1236K
描述
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CMN1001R6GLLA 数据手册

CMN1001R6GLLA

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CMN1001R6GLLA is the N-Channel enhancement

mode power field effect transistors with high cell density,

trench technology. This high density process and design

have been optimized switching performance and especial-

ly tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features

Marking Code = N1001R6GLLA

Date Code = XXXX



V_DS: 100V

I_D(@V_GS=10V): 120A

N1001R6GLLA

RDS_ON(@V_GS=10V) : < 2.0mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TOLL

P/N

Packaging

Remark

PIN 9

CMN1001R6GLLA 2000/Tape & Reel

ROHS

PIN 1

PIN 2-8

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

100

±20

250

120

184

1000

250

Tc=25°C(Silicon Limit)

Continuous Drain Current ⁽¹⁾Tc=25°C(Package Limit)

Tc=100°C (Silicon Limit)

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Total Power Dissipation ⁽³⁾

Derating Factor

above 25°C

1.7

W/°C

Thermal Resistance Junction-to-Case ⁽³⁾

RθJC

0.6

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +175

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