Datasheet > CMN1003GXP

CMN1003GXP

更新时间： 2024-11-29 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1163K
描述
TO-220

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CMN1003GXP 数据手册

CMN1003GXP

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CMN1003GXP is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

CMN1003GXP=Marking Code

XXXX = Date Code



VDS: 100V

ID (@VGS=10V): 172A

N1003GXP

XXXX

RDS_ON(@VGS=10V) : < 5mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

P/N

Package Type Packaging

Remark

CMN1003XGP

TO-220

Tube

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

100

±20

Tc=25°C (Silicon Limit)

172

Continuous Drain Current ⁽¹⁾Tc=25°C (Package Limit)

120

Tc=100°C (Silicon Limit)

120

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

480

311

Total Power Dissipation ⁽³⁾

2.5

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

0.402

-55 to +150

Junction and Storage Temperature Range

TJ,TSTG

May. 2022, Rev. 1.0

1 of 6

www.appliedpowermicro.com

12 3 4 5

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