Datasheet > CMN10012GS8

CMN10012GS8

更新时间： 2024-11-29 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1265K
描述
SO-8

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CMN10012GS8 数据手册

CMN10012GS8

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CMN10012GS8 is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 100V

ID: 12.3A

Marking Code = N10012GS8

Date Code = XXXX

N10012GS8

XXXX

RDS_ON(@VGS= 10V) : < 13mΩ

RDS_ON(@VGS= 4.5V) : < 15.6mΩ

High density cell design for extremely low RDS_ON



Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SO-8

Part Number

Packaging

Reel Size

CMN10012GS8 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

100

VGS

±20

TA=25°C

TA=70°C

12.3

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

9.8

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Sep. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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