Datasheet > CMMT495

CMMT495

更新时间： 2024-11-28 21:55:23

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描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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CMMT495 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CMMT495

PIN CONFIGURATION (NPN)

1 = BASE

SOT-23

2 = EMITTER

Formed SMD Package

3 = COLLECTOR

Marking Code is =495

ABSOLUTE MAXIMUM RATINGS

VALUE

170

150

DESCRIPTION

SYMBOL

V_CBO

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Current Peak

Base Current

V_CEO

V_EBO

I_C

I_CM

I_B

200

500

Power Dissipation @ T_a=25ºC

P_D

Operating And Storage Junction

Temperature Range

T_j,T_stg

- 55 to +150

ºC

Electrical Characterstics (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

CONDITIONS

MIN

170

150

TYP

MAX

UNIT

I_C=100mA, I_E=0

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut Off Current

Emitter Cut Off Current

*V_CEO(sus)

I_C=10mA, I_B=0

V_EBO

I_CBO

I_CES

I_EBO

I_E=100mA, I_C=0

V_CB=150V, I_E=0

V_CE=150V, V_BE=0

100

0.2

V_EB=4V, I_C=0

I_C=250mA, I_B=25mA

I_C=500mA, I_B=50mA

Collector Emitter Saturation

Voltage

*V_CE(sat)

*V_BE(sat)

0.3

I_C=500mA, I_B=50mA

Base Emitter Saturation Voltage

1.0

*V_BE(on)

h_FE

V_CE=10V, I_C=500mA

Base Emitter On Voltage

DC Current Gain

V_CE=10V, I_C=1mA

*V_CE=10V, I_C=250mA

*V_CE=10V, I_C=500mA

V_CE=10V, I_C=1A

100

300

f_T

V_CE=10V, I_C=50mA, f=100MHz

V_CB=10V, f=1MHz

Transition Frequency

Output Capacitance

100

MHz

C_obo

*Pulse Test: Pulse Width =300 ms, Duty Cycle <2%

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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