CMBT200A

更新时间： 2024-11-01 03:25:59

品牌	Logo	应用领域
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页数	文件大小	规格书
3页	173K
描述
PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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CMBT200A 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CMBT200

CMBT200A

SOT23

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING : AS BELOW

Designed for General Purpose Amplifier Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current - Continuous

Power Dissipation

6.0

500

350

Derate Above=25 deg C

Operating And Storage Junction

Temperature Range

Thermal Resistance

Junction to Ambient

2.8

-55 to +150

mW/deg C

deg C

Tj, Tstg

(Rth j-a)

357

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

6.0

MAX

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

VCBO

VCEO

VEBO

ICBO

ICES

IEBO

hFE

IC=10uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=50V, IE=0

VCE=4V, IE=0

VEB=4V, IC=0

IC=100uA,VCE=1V

Emitter Cut off Current

DC Current Gain

CMBT200

CMBT200A

240

IC=10mA,VCE=1V

CMBT200

CMBT200A

100

300

450

600

IC=100mA,VCE=1V*

IC=150mA,VCE=5V*

CMBT200A

100

CMBT200

CMBT200A

100

350

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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