Datasheet > CMBT2907

CMBT2907

更新时间： 2024-01-24 11:55:49

品牌	Logo	应用领域
RECTRON		晶体晶体管光电二极管
页数	文件大小	规格书
2页	82K
描述
PNP Silicon Planar Epitaxial Transistors

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数据手册

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CMBT2907 数据手册

CMBT2907

PNP Silicon Planar Epitaxial Transistors

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

Unit: mm

SOT-23 SMD Package

Absolute Maximum Ratings (Ta = 25 ^oC unless specified otherwise)

SYMBOL

CMBT2907

CMBT2907A

UNITS

DESCRIPTION

-V_CEO

-V_CBO

-V_EBO

-I_C

P_tot

T_stg

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

5.0

600

250

-55 to +150

150

Collector Current

Power dissipation up to Tamb = 25 ^oC

Storage Temperature

^oC

Junction Temperature

DC Current Gain

h_FE

> 30

> 50

-V_CE= 10V -I_C= 500mA

Turn-off switching time

t_off

< 100

> 200

-I_Con= 150 mA; -I_Bon= I_Boff= 15 mA

Transition frequency at f = 100 MHz

-I_C= 50 mA; -V_CE= 20 V

f_T

MHz

Thermal Characteristics

Junction to Ambient in free air

R_th(j-a)

500

K/W

Electrical Characteristics (at Ta=25 ^oC unless otherwise specified)

CMBT2907 CMBT2907A

DESCRIPTION

SYMBOL

-I_CBO

CONDITIONS

I_E= 0, -V_CB= 50V

UNITS

Collector Cut Off Current

< 20

< 10

I_E= 0, -V_CB= 50V, Tj=125^oC

-V_EB= 0.5V, -V_CE= 30V

-V_EB= 3V, -V_CE= 30V

-I_CBO

-I_CEX

-I_BEX

-V_CE(Sat)

-V_BE(Sat)

-V_CE(Sat)

-V_BE(Sat)

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

< 50

< 0.4

< 1.3

< 1.6

< 2.6

> 60

Base Current w/reverse biased emitter junction

Saturation Voltages

-I_C= 150mA, -I_B= 15mA

-I_C= 500mA, -I_B= 50mA

Open emitter; -I_C= 10uA, I_E= 0

Open base; -I_C= 10mA, I_B= 0

Open collector; -I_E= 10uA, I_C= 0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

> 40

> 60

> 5.0

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