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CMBT3906EPBFREE

更新时间： 2024-11-18 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	205K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CMBT3906EPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.74	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CMBT3906EPBFREE 数据手册

CMBT3904E NPN

CMBT3906E PNP

Central

Semiconductor Corp.

ENHANCED SPECIFICATION

COMPLEMENTARY FEMTOmini^TM

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMBT3904E (NPN)

and CMBT3906E (PNP) are general purpose transistors

with enhanced specifications. These devices are ideal

for applications where ultra small size and power

dissipation are the prime requirements. Packaged in the

FEMTOmini™ SOT-923 package, these transistors

provide performance characteristics suitable for the

most demanding size constrained applications.

MARKING CODES: CMBT3904E: B

CMBT3906E: G

SOT-923 CASE

FEATURES

APPLICATIONS

• Very Small Package Size

• 200mA Collector Current

• DC / DC Converters

• Voltage Clamping

• Low V

(0.1V Typ @ 50mA)

• Protection Circuits

CE(SAT)

• Battery powered applications including:

Cell Phones, Digital Cameras, Pagers,

PDAs, Laptop Computers, etc.

• Miniature 0.8 x 0.6 x 0.4mm

Ultra Low height profile

FEMTOmini™ Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

♦

CBO

CEO

6.0

200

100

EBO

Power Dissipation

Operating and Storage

Junction Temperature

T , T

-65 to +150

1250

°C

stg

Thermal Resistance

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

NPN

TYP

PNP

TYP

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

MIN

MAX

UNITS

CEV

I =10µA

115

♦

CBO

I =1.0mA

CEO

I =10µA

6.0

7.5

7.9

♦

EBO

I =10mA, I =1.0mA

0.057

0.100

0.750

0.850

0.050

0.100

0.750

0.850

0.100

0.200

0.850

0.950

CE(SAT)

I =50mA, I =5.0mA

C B

CE(SAT

)

I =10mA, I =1.0mA

0.650

BE(SAT

)

I =50mA, I =5.0mA

)

♦ Enhanced specification.

R0 (17-April 2007)

中文翻译

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