Datasheet > CMBT5551

CMBT5551

更新时间： 2024-11-17 22:28:39

品牌	Logo	应用领域
CDIL		晶体晶体管高压
页数	文件大小	规格书
3页	67K
描述
SILICON NPN HIGH-VOLTAGE TRANSISTOR

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中文翻译

获取价格

数据手册

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CMBT5551 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

SOT-23 Formed SMD Package

CMBT5551

SILICON N–P–N HIGH–VOLTAGE TRANSISTOR

N–P–N transistor

Marking

CMBT5551 = G1

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Collector current

max.

max

180

160

600 mA

250 mW

150 ° C

CBO

CEO

Total power dissipation up to T

Junction temperature

= 25 °C

amb

tot

max.

Collector–emitter saturation voltage

= 50 mA; I = 5 mA

max.

min.

0.2

CEsat

D.C. current gain

= 10 mA; V

= 5 V

RATINGS (at T = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

CBO

CEO

EBO

max.

180

160

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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