CMBT857

更新时间： 2024-11-21 03:25:59

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	115K
描述
PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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CMBT857 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CMBT857

SOT23

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING: AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

VCBO

VCEO

VEBO

6.0

200

Collector Power Dissipation

Junction Temperature

Storage Temperature

Tstg

200

125

-55 to +125

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

150

TYP

MAX

100

500

UNIT

Collector -Emitter Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCEO

ICBO

IEBO

IC=100uA, IB=0

VCB=60V, IE=0

VEB=6V, IC=0

hFE(1)

hFE(2)

IC=1mA,VCE=6V

IC=0.1mA,VCE=6V

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Dynamic Characteristics

VCE(Sat) IC=100mA,IB=10mA

VBE(Sat) IC=100mA,IB=10mA

0.30

1.0

Transition Frequency

Collector Output Capacitance

Cob

VCE=6V,IC=10mA,

VCB=6V, IE=0

f=1MHz

200

4.0

MHz

Noise Figure

VCE=6V, IE=0.3mA

f=100Hz, Rg=10kohms

CLASSIFICATION

hFE(1)

MARKING

150-300

250-500

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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