Datasheet > CMBT9015D

CMBT9015D

更新时间： 2024-09-16 23:14:23

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	174K
描述
PNP SILICON PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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CMBT9015D 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP SILICON PLANAR TRANSISTOR

CMBT 9015

SOT-23

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING: AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

Collector Dissipation

Operating And Storage Junction

Temperature Range

5.0

100

250

deg C

Tj, Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

5.0

TYP

MAX

500

1000

0.70

1.2

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=30V, IE=0

VEB=5V, IC=0

IC=1mA, VCE=5V

150

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

VCE(Sat) IC=100mA,IB=5mA

VBE(Sat) IC=100mA,IB=5mA

Dynamic Characteristics

Transition Frequency

VCE=5V,IC=10mA,

f=100MHz

VCB=10V,f=1MHz

125

MHz

Output Capacitance

Cob

3.5

CLASSIFICATION

hFE

MARKING

CMBT9015

150-1000

400-1000

15D

100-300

15B

200-600

15C

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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