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CMBT9014B-T PDF预览

CMBT9014B-T

更新时间: 2024-09-17 12:59:15
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页数 文件大小 规格书
2页 324K
描述
Transistor

CMBT9014B-T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

CMBT9014B-T 数据手册

 浏览型号CMBT9014B-T的Datasheet PDF文件第2页 
CMBT9014  
NPN SILICON PLANAR TRANSISTOR  
FEATURES  
* Power dissipation  
PC :0.25  
* Collector current  
IC : 0.1  
W (Tamb=25OC)  
A
* Collector-base voltage  
30  
V
:
V
CBO  
SOT-23  
* Operating and storage junction temperature range  
T ,Tstg: -55OC to +150OC  
J
COLLECTOR  
3
MECHANICAL DATA  
* Case: Molded plastic  
BASE  
1
0.055(1.40)  
0.047(1.20)  
2
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
EMITTER  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
* Weight: 0.008 gram  
0.026(0.67)  
0.022(0.57)  
0.004(0.10)  
0.000(0.00)  
0.102(2.60)  
0.095(2.40)  
0.020(0.50)  
0.012(0.30)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase , half wave, 60HZ, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
3
Dimensions in inches and (millimeters)  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
VALUE  
30  
UNITS  
Collector-base Voltage  
Collector-emitter Voltage  
Emitter-base Voltage  
V
V
V
V
CBO  
V
30  
CEO  
V
5.0  
EBO  
Collector Current  
I
100  
250  
mA  
C
Collector Dissipation  
P
C
mW  
O
Operation And Storage Junction  
T , T  
-55 to +150  
C
J
STG  
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
30  
TYP  
-
MAX  
-
UNITS  
Collector-base Voltage (I = 100µA, I =0)  
V
V
V
V
V
V
C
E
CBO  
Collector-emitter Voltage (I = 1mA, I =0)  
30  
-
-
-
-
C
B
CEO  
EBO  
Emitter-base Voltage (I = 100µA, I =0)  
5.0  
E
C
Collector Cut-off Current (V = 30V, I =0)  
I
-
-
-
-
15  
nA  
nA  
CB  
E
CBO  
Emitter Cut-off Current (V = 5V, I = 0)  
I
EBO  
500  
EB  
C
DC Current Gain (I = 1mA, V = 5V)  
h
150  
-
-
-
-
-
-
1000  
0.60  
1.2  
-
-
C
CE  
FE  
Collector-emitter Saturation Voltage (I = 100mA, I = 5mA)  
V
V
-
V
V
C
B
CE(sat)  
BE(sat)  
fT  
Base-emitter Voltage ((I = 100mA, I = 5mA)  
-
C
B
Transition Frequency (V = 5V, I = -10mA, f=100MHZ)  
CE  
125  
MH  
pF  
Z
C
Output Capacitance ((V = 10V, f= 1MHz)  
CB  
C
-
-
3.5  
4.0  
ob  
Noise Figure (V = 5V, I = 200uA, f=1KHZ)  
NF  
dB  
CE  
C
CLASSIFICATION  
CMBT9014  
150-1000  
B
C
D
h
FE  
100-300  
14B  
200-600  
400-1000  
14  
14C  
14D  
Marking  
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
VD 2008-02  

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