Datasheet > CMBT9013G

CMBT9013G

更新时间： 2024-09-16 23:42:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	78K
描述
TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SOT-23

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中文翻译

获取价格

数据手册

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CMBT9013G 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR TRANSISTOR

CMBT 9013

SOT-23

PIN CONFIGURATION (NPN)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING: AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Dissipation

5.0

500

250

deg C

Tj, Tstg

Operating And Storage Junction

Temperature Range

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

5.0

118

TYP

MAX

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=25V, IE=0

VEB=3V, IC=0

100

500

305

0.20

0.60

1.0

1.20

IC=50mA,VCE=1V *

IC=300mA,VCE=1V

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

VCE(Sat) IC=150mA,IB=15mA

IC=300mA,IB=30mA

VBE(Sat) IC=150mA,IB=15mA

IC=300mA,IB=30mA

Dynamic Characteristics

Transition Frequency

VCE=10V,IC=50mA,

f=100MHz

140

MHz

CLASSIFICATION

hFE*

MARKING

G/H/I

118-305

3GI

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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CMBT9014B	CDIL	获取价格	NPN SILICON PLANAR TRANSISTOR
CMBT9014B	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
CMBT9014B-T	RECTRON	获取价格	Transistor
CMBT9014C	CDIL	获取价格	NPN SILICON PLANAR TRANSISTOR
CMBT9014D	CDIL	获取价格	NPN SILICON PLANAR TRANSISTOR
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