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CMBT8599 PDF预览

CMBT8599

更新时间: 2024-09-17 03:25:59
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 121K
描述
GENERAL PURPOSE TRANSISTOR

CMBT8599 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.86
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):75
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMBT8599 数据手册

 浏览型号CMBT8599的Datasheet PDF文件第2页浏览型号CMBT8599的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SOT-23 Formed SMD Package  
CMBT8598  
CMBT8599  
GENERAL PURPOSE TRANSISTOR  
P–N–P transistor  
Marking  
PACKAGE OUTLINE DETAILS  
ALL DIMENSIONS IN mm  
CMBT8598 = 2K  
CMBT8599 = 2W  
Pin configuration  
1 = BASE  
2 = EMITTER  
3 = COLLECTOR  
3
1
2
ABSOLUTE MAXIMUM RATINGS  
CMBT 8598  
8599  
80  
80  
Collector–base voltage (open emitter)  
Collector–emitter voltage (open base)  
Emitter–base voltage (open collector)  
Collector current (d.c.)  
–V  
–V  
–V  
max. 60  
max. 60  
max.  
V
V
V
mA  
mW  
CBO  
CEO  
EBO  
5
–I  
max.  
max.  
500  
225  
C
Total power dissipation at T  
D.C. current gain  
= 25°C  
P
amb  
tot  
–I = 100 mA; –V  
C CE  
= 5 V  
h
min.  
75  
75  
FE  
RATINGS (at T = 25°C unless otherwise specified)  
A
Limiting values  
Collector–base voltage (open emitter)  
Collector–emitter voltage (open base)  
Emitter–base voltage (open collector)  
Collector current (d.c.)  
–V  
–V  
–V  
max. 60  
max. 60  
max.  
80  
80  
V
V
V
CBO  
CEO  
EBO  
5
500  
–I  
max.  
mA  
C
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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