CMBT9012

更新时间： 2024-09-16 22:27:55

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	174K
描述
PNP SILICON PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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CMBT9012 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP SILICON PLANAR TRANSISTOR

CMBT 9012

SOT-23

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

MARKING: AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Dissipation

Operating And Storage Junction

Temperature Range

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

5.0

500

250

deg C

Tj, Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

5.0

118

TYP

MAX

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=25V, IE=0

VEB=3V, IC=0

100

500

305

0.20

0.60

1.0

1.20

IC=50mA,VCE=1V *

IC=300mA,VCE=1V

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

VCE(Sat) IC=150mA,IB=15mA

IC=300mA,IB=30mA

VBE(Sat) IC=150mA,IB=15mA

IC=300mA,IB=30mA

Dynamic Characteristics

Transition Frequency

VCE=10V,IC=50mA,

f=100MHz

140

MHz

CLASSIFICATION

hFE*

MARKING

G/H/I

118-305

2GI

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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