Datasheet > CMBT8098

CMBT8098

更新时间： 2024-11-18 03:25:59

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	144K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

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数据手册

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CMBT8098 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CMBT8098

CMBT8099

PIN CONFIGURATION (NPN)

1 = BASE

2 = EMITTER

3 = COLLECTOR

SOT-23

Formed SMD Package

Marking

CMBT8098- KA

CMBT8099- KB

ABSOLUTE MAXIMUM RATING

CMBT8099

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

CMBT8098

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Power Dissipation T_a=25ºC (Note1)

6.0

500

225

1.8

300

2.4

P_D

mW/ºC

Derate Above 25ºC

Power Dissipation T_a=25ºC (Note2)

Derate Above 25ºC

P_D

Operating And Storage Junction

Temperature Range

T_j,T_stg

- 55 to +150

ºC

Thermal Resistance

R_th(j-a)

Junction to Ambient (Note1)

Junction to Ambient (Note2)

556

417

ºC/W

Note (1) FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)

Note (2) Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

ELECTRICAL CHARACTERISTICS (T_a=25º C unless specified otherwise)

DESCRIPTION

Collector Base Voltage

SYMBOL

TEST CONDITION

I_C=100mA, I_E=0

CMBT8098

MIN TYP MAX UNITS

V_CBO

CMBT8099

V_CEO

I_C=10mA, I_B=0

CMBT8098

Collector Emitter Voltage

CMBT8099

V_EBO

Emitter Base Voltage

Collector Cut Off Current

I_E=10mA, I_C=0

V_CE=60V, I_B=0

CMBT8098

6.0

0.1

CES

CBO

V_CB=60V, I_E=0

CMBT8099

V_CB=80V, I_E=0

V_EB=6V, I_C=0

0.1

Emitter Cut Off Current

EBO

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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