Datasheet > CMBT8550E

CMBT8550E

更新时间： 2024-11-18 12:24:15

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	175K
描述
PNP SILICON PLANAR EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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CMBT8550E 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

CMBT8550

PIN CONFIGURATION (PNP)

1 = BASE

SOT-23

2 = EMITTER

Formed SMD Package

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

UNITS

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CEO

V_EBO

I_C

800

250

Collector Current Continuous

Collector Dissipation @ T_a=25ºC

P_C

Operating and Storage Junction

Temperature Range

T_j, T_stg

- 55 to +125

ºC

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

TEST CONDITION

I_C=100mA, I_E=0

MIN TYP MAX UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

V_CEO

I_C=10mA, I_B=0

V_EBO

I_E=10mA, I_C=0

V_CB=15V, I_E=0

I_CBO

I_EBO

h_FE

V_EB=4V, I_C=0

500

I_C=5mA, V_CE=1V

*I_C=100mA, V_CE=1V

I_C=500mA, V_CE=1V

100

400

V_CE(sat)

V_BE(sat)

f_T

I_C=500mA, I_B=50mA

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Transition Frequency

0.5

1.2

I_C=100mA, V_CE=10V, f=100MHz

V_CB=10V, f=1MHz

100

MHz

C_ob

Output Capacitance

CLASSIFICATIONS

*h_FE

MARKING

CMBT8550

100 - 400

100 - 200

55C

150 - 300

55D

280 - 400

55E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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