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CMBT3906ETRLEADFREE PDF预览

CMBT3906ETRLEADFREE

更新时间: 2024-11-18 13:02:23
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 205K
描述
Transistor

CMBT3906ETRLEADFREE 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
配置:Single最小直流电流增益 (hFE):100
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.1 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
标称过渡频率 (fT):300 MHzBase Number Matches:1

CMBT3906ETRLEADFREE 数据手册

 浏览型号CMBT3906ETRLEADFREE的Datasheet PDF文件第2页 
TM  
CMBT3904E NPN  
CMBT3906E PNP  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
COMPLEMENTARY FEMTOminiTM  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMBT3904E (NPN)  
and CMBT3906E (PNP) are general purpose transistors  
with enhanced specifications. These devices are ideal  
for applications where ultra small size and power  
dissipation are the prime requirements. Packaged in the  
FEMTOmini™ SOT-923 package, these transistors  
provide performance characteristics suitable for the  
most demanding size constrained applications.  
MARKING CODES: CMBT3904E: B  
CMBT3906E: G  
SOT-923 CASE  
FEATURES  
APPLICATIONS  
• Very Small Package Size  
• 200mA Collector Current  
• DC / DC Converters  
• Voltage Clamping  
• Low V  
(0.1V Typ @ 50mA)  
• Protection Circuits  
CE(SAT)  
• Battery powered applications including:  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
• Miniature 0.8 x 0.6 x 0.4mm  
Ultra Low height profile  
FEMTOminiSurface Mount Package  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
60  
40  
CBO  
V
V
CEO  
V
6.0  
200  
100  
V
EBO  
I
mA  
mW  
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
1250  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
NPN  
TYP  
PNP  
TYP  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
MAX  
UNITS  
I
V
50  
nA  
CEV  
CE  
EB  
BV  
I =10µA  
C
60  
40  
115  
60  
90  
V
V
V
V
V
V
V
CBO  
BV  
I =1.0mA  
C
55  
CEO  
BV  
I =10µA  
E
6.0  
7.5  
7.9  
EBO  
V
I =10mA, I =1.0mA  
0.057  
0.100  
0.750  
0.850  
0.050  
0.100  
0.750  
0.850  
0.100  
0.200  
0.850  
0.950  
CE(SAT)  
C
B
V
I =50mA, I =5.0mA  
C B  
CE(SAT  
)
V
V
I =10mA, I =1.0mA  
0.650  
BE(SAT  
BE(SAT  
C
B
)
I =50mA, I =5.0mA  
C
B
)
Enhanced specification.  
R0 (17-April 2007)  

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