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CMBT4401 PDF预览

CMBT4401

更新时间: 2024-01-07 21:32:44
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
3页 108K
描述
SILICON PLANAR EPITAXIAL TRANSISTOR

CMBT4401 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.54
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:DARLINGTON
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

CMBT4401 数据手册

 浏览型号CMBT4401的Datasheet PDF文件第2页浏览型号CMBT4401的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SOT-23 Formed SMD Package  
CMBT4401  
SILICON PLANAR EPITAXIAL TRANSISTOR  
NP–N transistor  
Marking  
CMBT4401 = 2X  
PACKAGE OUTLINE DETAILS  
ALL DIMENSIONS IN mm  
Pin configuration  
1 = BASE  
2 = EMITTER  
3 = COLLECTOR  
3
1
2
ABSOLUTE MAXIMUM RATINGS  
Collector–emitter voltage  
Collector current (DC)  
V
max.  
max.  
40 V  
600 mA  
CEO  
I
C
DC current gain  
min.  
max.  
max  
100  
300  
250 mW  
I
C
= 150 mA; V  
= 1 V  
h
CE  
FE  
Total power dissipation up to T  
= 25 °C  
P
amb  
tot  
RATINGS (at T = 25°C unless otherwise specified)  
A
Limiting values  
Collector–emitter voltage  
Collector–base voltage  
Emitter–base voltage  
Collector current (DC)  
Total power dissipation up to T  
Storage temperature range  
Junction temperature  
V
V
V
max.  
max.  
max.  
max.  
max  
40  
60  
6
600 mA  
250 mW  
V
V
V
CEO  
CBO  
EBO  
I
C
= 25°C  
P
T
amb  
tot  
–55 to +150 ° C  
max. 150 ° C  
stg  
T
j
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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