Datasheet > CMBT3904E_10

CMBT3904E_10

更新时间： 2022-10-22 07:50:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	353K
描述
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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CMBT3904E_10 数据手册

CMBT3904E NPN

CMBT3906E PNP

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

COMPLEMENTARY

SILICON TRANSISTORS

The CENTRAL SEMICONDUCTOR CMBT3904E

(NPN) and CMBT3906E (PNP) are general purpose

transistors with enhanced specifications. These

devices are ideal for applications where ultra small

size and power dissipation are the prime requirements.

Packaged in the FEMTOmini™ SOT-923 package,

these transistors provide performance characteristics

suitable for the most demanding size constrained

applications.

SOT-923 CASE

MARKING CODES: CMBT3904E: B

CMBT3906E: G

FEATURES

• Very Small Package Size

• 200mA Collector Current

APPLICATIONS

• DC / DC Converters

• Voltage Clamping

• Low V

• Miniature 0.8 x 0.6 x 0.4mm

Ultra Low height profile

(0.1V Typ @ 50mA)

• Protection Circuits

CE(SAT)

• Battery powered applications including:

Cell Phones, Digital Cameras, Pagers,

PDAs, Laptop Computers, etc.

FEMTOmini™ Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦^{Collector-Base Voltage}

Collector-Emitter Voltage

♦^{Emitter-Base Voltage}

Continuous Collector Current

Power Dissipation

CBO

CEO

6.0

EBO

200

°C

100

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

1250

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

NPN

TYP

PNP

TYP

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V, V =3.0V

CEV

CE EB

I =10µA

115

♦

CBO

CEO

EBO

I =1.0mA

I =10µA

♦^BV

6.0

7.5

7.9

I =10mA, I =1.0mA

0.057

0.100

0.750

0.850

0.050

0.100

0.750

0.850

0.100

0.200

0.850

0.950

♦

CE(SAT)

I =50mA, I =5.0mA

C B

CE(SAT

)

I =10mA, I =1.0mA

0.650

BE(SAT

)

I =50mA, I =5.0mA

)

♦ Enhanced specification.

R1 (8-January 2010)

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