TM
CMBT3904E NPN
CMBT3906E PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
COMPLEMENTARY FEMTOminiTM
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E (NPN)
and CMBT3906E (PNP) are general purpose transistors
with enhanced specifications. These devices are ideal
for applications where ultra small size and power
dissipation are the prime requirements. Packaged in the
FEMTOmini™ SOT-923 package, these transistors
provide performance characteristics suitable for the
most demanding size constrained applications.
MARKING CODES: CMBT3904E: B
CMBT3906E: G
SOT-923 CASE
FEATURES
APPLICATIONS
• Very Small Package Size
• 200mA Collector Current
• DC / DC Converters
• Voltage Clamping
• Low V
(0.1V Typ @ 50mA)
• Protection Circuits
CE(SAT)
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
• Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini™ Surface Mount Package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
60
40
♦
♦
CBO
V
V
CEO
V
6.0
200
100
V
EBO
I
mA
mW
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
T , T
-65 to +150
1250
°C
J
stg
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
NPN
TYP
PNP
TYP
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN
MAX
UNITS
I
V
50
nA
CEV
CE
EB
BV
I =10µA
C
60
40
115
60
90
V
V
V
V
V
V
V
♦
CBO
BV
I =1.0mA
C
55
CEO
BV
I =10µA
E
6.0
7.5
7.9
♦
♦
♦
EBO
V
I =10mA, I =1.0mA
0.057
0.100
0.750
0.850
0.050
0.100
0.750
0.850
0.100
0.200
0.850
0.950
CE(SAT)
C
B
V
I =50mA, I =5.0mA
C B
CE(SAT
)
V
V
I =10mA, I =1.0mA
0.650
BE(SAT
BE(SAT
C
B
)
I =50mA, I =5.0mA
C
B
)
♦ Enhanced specification.
R0 (17-April 2007)